參考文獻:
https://avs.scitation.org/doi/abs/10.1116/1.1385917?journalCode=jvn
Sidewall oxidation behavior of dichlorosilane-based W-polycide gate
多晶矽化鎢閘極結構的製造方法
一種避免閘極之矽化金屬層側壁產生突出物的方法
Effect of annealing ambient on WSi x (x=2.3) sidewall deformation and contact resistance in dichlorosilane-based W-polycide gate
Monitoring and purging dynamics of trace gaseous impurity in atmospheric pressure rapid thermal process
