Recently, the Belgian Research Center of Interuniversity Microelectronics Centre (IMEC) launched a joint development program (IIAP: industrial affiliation program), the target is to reduce the gallium nitride (GaN) technology costs , the use of large diameter of gallium nitride on silicon (GaN-on-Si) and the development of high-efficiency , high-power white LED for its related finished products including the high power LED flood light, which is committed to promoting the development of GaN technology, including power conversion and solid state lighting (SSL) applications such as high power LED flood light.

Marianne Germain IMEC，the director of GaN project, said the combination of large diameter silicon ( sizes from 100mm to 150mm, and then increased to 200mm) and CMOS compatible programs is to create economically viable solutions . As far as the solid-state lighting especially the high power LED flood light and other power LED light is concerned , part of the IIAP plan is the use of silicon-based GaN technology to develop high-efficiency high-power white LED to use for the high power LED flood light and other power LED packing products . The objectives of the program include improving internal and external quantum efficiency , so that achieve high current operation.

IMEC said , III -nitride with excellent luminescent properties has a wide range of visible and ultraviolet spectrum . However , if the new volume manufacturing technology develop the LED whose luminous efficiency of high power LED flood light and other LED packing products is up to 150lm / W, then the high power LED flood light and other LED applications these devices is used to develop can be widely accepted.

IMEC also invite integrated device manufacturers and compound semiconductor industry to join the program together.Browsing http://www.lead-lighting.com/products/sid125-1.htm for more information about the high power LED floodlight.

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