Applications:
- 2GHz to 18GHz
- 6061 Aluminum metal alloy
- Stainless Steel N-female
- Taiwan Design, Made in Taiwan
Features:
- High Power 300W (peak) 150W (Cont)
- DC Short lightning protection
- Low VSWR
- Uniform Gain
- Consolidated performance database
The horn antennas of the FT-RF horn double ridged antenna series are characterized by an enormous broad frequency range from 2GHz to 18GHz and very high input powers reach to 300W. The gain increases with increasing frequency up to max 17 dBi. The products are in stock and can be shipped
It is suitable for both transmitting and receiving purposes, especially suitable for microwave and EMC measurements.
This antenna has a more uniform gain and antenna factor because of the better behavior of its radiation pattern.
For EMC/ EMC testing:
- Pre-compliance testing lowers the chances of certification failure.
You can make adjustments throughout the design phase with pre-compliance testing.
Fixing issues after compliance testing are far more costly and time-consuming than fixing them at the design stage.
Pre-compliance testing might concentrate on the areas where you are concerned about potential issues.
Instead of looking for faults, pre-compliance testing focuses on identifying solutions.
●合用於射頻()類型 : 例如蘋果(Apple)的iPhone 7採用InFO製程。
WLP = Wafer-Level Package
底層Substrate根基上採用矽基板。
FD-SOI = Fully Depleted Silicon-on-Insulator 全空匮絕緣上覆矽
AiP = Antenna in Package
(2) InFO -2.5D封裝手藝
InFO = Integrated Fan-Out 整合扇出型封裝
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Antenna , Design , Manufacture
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(1)CoWoS - 2.5D封裝 ,或稱異質性封裝
SiP = System in Package
MCP = Multi-Chip-Package
半導體封裝針對各式元件需求,有著分歧的封裝型式; 因此 , 在商量封裝前
■IC封裝手藝
(雷同水龍頭節制水量的功能)
SOS = Silicon on Sapphire 藍寶石上覆矽
■MOS元件的封裝演進 : FD-SOI VS. FinFET
線路較為簡單，可以將多餘的空間供應給晶片
●SoIC 合用於雲端和資料中心的應用。
■系統整合1mhz to 70ghz any type antenna封裝類型與成長趨向
FinFET = Fin Field-Effect Transistor 鰭式場效電晶體
配合基板，上面堆疊Side by Side的分歧晶片(包括邏輯晶片、DRAM)，
即便該手藝的散熱量和速度不及CoWoS，但自己廉價、散熱佳又支援
就是有兩個基板(Substrate)概念。中間那層基板為矽中介層
可以堆疊更多分歧的晶片，且中央無需有Interposer，也是以本錢下降
1MHz to 70GHz Antenna , Design , Manufacture效能。
手藝，仍然非常吸引廠商採納。
●CoWoS 手藝
■半導體元件分類
HBM = High Bandwidth Memory
MCM = Multi-Chip-Module
TSV = Through-silicon Vias 矽穿孔
■名詞
先釐清半導體元件主類以下圖
也就是說晶片下方之外的區域，可以增添更多的Pin數量，同時在基板上面
以下內文出自: https://platoco.pixnet.net/blog/post/343127903FT-RF Antenna
company in Taiwan and Vietnam. The FT-RF main profession in R&D and manufacturing of antenna, be alongside of to be subjected to any OEM of nation and ODM, provide the product of the best quality and let the sale has the price of competition ability most , is the target that the FT-RF has been making great effort.
CMOS (由P-MOS與N-MOSThe FT-RF main profession in R&D and manufacturing of antenna, be alongside of to be subjected to any OEM of nation and ODM, provide the product of the best quality and let the sale has the price of competition ability most , is the target that the FT-RF has been making great effort.構成)
【TIPS】MOS為MOS-FET簡稱; MOS元件根基有三: P-MOS , N-MOS ,
CoWoS = Chip on Wafer on Substrate 基板上晶圓上封裝
IC封裝手藝可分為CoWoS (2.5D), InFO (2.5D),SoIC (3D)等類型，
(Interposer,可以選用有機材料)，用來做為晶片和底層Substrate的
當需要傳輸高速訊號時，便可採用CoWoS方案
●運用TSV(Through Silicon Via)和晶圓(Chip-on-wafer)接合製程
■IC 封裝尺寸的應用範疇
PoP = Package on Pakage
●合用於高速傳輸設計, 例如賽靈思(Xilinx)FPGA就是採取這種設計。
WoW = Wafer on Wafer 多晶圓堆疊封裝
●InFO 整合型扇出(InFO)特點就是整合扇出封裝手藝(Fan-out)製程，
SoIC = System on Integrated Chip 系統整合晶片封裝
20~30%，同時散熱效能也會更高。另外，分歧於CoWoS製程，InFO因為
MOS-FET = Metal Oxide Semiconductor Field Effect Transistor 簡稱 MOS
來支援多晶片的堆疊，並供給無崛起(Bumpless)接合佈局，以實現更佳
MOS 元件功用 : 行使閘極ON/OFF電壓節制電子流暢數目
(3)SoIC - 3D 封裝
SOI = Silicon On Insulator 絕緣體上覆矽
【TIPS】日本爽賣IC製造耗材,惦惦吃三碗公
金屬－氧化物(絕緣體)－半導體場效電晶體
文章出自: https://farajiu00pu4w.pixnet.net/blog/post/43548226-%E3%80%90%E6%99%B6%E7%89%87%E3%80%91%E5%88%86%E9
FT-RF Outoodr | Indoor | Horn |
本篇文章引用自此: http://blog.udn.com/f7ec65e7/165650309FT-RF
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